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| FDS9933 September 2006 FDS9933 Dual P-Channel 2.5V Specified PowerTrench(R) MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features * -5 A, -20 V, RDS(ON) = 55 m @ VGS = -4.5 V RDS(ON) = 90 m @ VGS = -2.5 V * Extended VGSS range (12V) for battery applications * Low gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * * * * Load switch Motor drive DC/DC conversion Power management D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 12 (Note 1a) Units V V A W -5 -30 2 1.6 1 0.9 -55 to +175 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking 9933 (c)2006 Fairchild Semiconductor International Device FDS9933 Reel Size 13'' Tape width 12mm Quantity 2500 units FDS9933 Rev C FDS9933 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 12 V, VGS = 0 V VDS = 0 V Min -20 Typ Max Units V Off Characteristics -12 -1 100 mV/C A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, VGS = -2.5 V, VGS = -4.5 V, VDS = -9 V, VDS = -10 V, f = 1.0 MHz ID = -3.2 A ID = -1.0 A VDS = -5 V ID = -3.4 A V GS = 0 V, -0.6 -0.8 3 44 72 -1.2 V mV/C 55 90 m A -16 8 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 825 420 150 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 16 46 40 25 40 80 70 40 20 ns ns ns ns nC nC nC VDS = -6 V, VGS = -4.5 V ID = -3.2A, 10 2.1 3.3 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.0 A (Note 2) -2.0 -0.7 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS9933 Rev C FDS9933 Typical Characteristics: 30 1.8 VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V V -3.0V VGS=-2.5V 1.6 -ID, DRAIN CURRENT (A) 20 -4.0V V 1.4 -3.0V 1.2 -2.5V 10 -3.5V -4.0V -4.5V -2.0V 1 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0.8 0 6 12 18 -ID, DRAIN CURRENT (A) 24 30 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -2.5A RDS(ON), ON-RESISTANCE (OHM) 1.3 ID = -5A VGS = -4.5V 0.12 1.2 0.1 1.1 0.08 TA = 125 C 0.06 o 1 TA = 25oC 0.04 0.9 0.8 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.02 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 30 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V 25 -ID, DRAIN CURRENT (A) TA = -55oC 125 C 25oC o VGS =0V 10 20 1 15 0.1 TA = 125 C 25oC -55oC o 10 0.01 5 0.001 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 0.0001 0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9933 Rev C FDS9933 Typical Characteristics: 5 -VGS, GATE-SOURCE VOLTAGE (V) 1600 ID = -5A 4 VDS = -4V -8V CAPACITANCE (pF) 1200 f = 1 MHz VGS = 0 V -6V 3 Ciss 800 2 Coss 400 1 Crss 0 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 1s 10s 1 DC VGS = -4.5V SINGLE PULSE RJA = 135oC/W TA = 25 C 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 o Figure 8. Capacitance Characteristics. 50 100s 1ms 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) 40 SINGLE PULSE RJA = 135C/W TA = 25C 30 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 135 C/W o 0.1 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9933 Rev C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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